Silicon carbide semiconductor element, method of manufacturing the same, and silicon carbide device

ABSTRACT

A silicon carbide semiconductor element and a manufacturing method thereof are disclosed in which a low contact resistance is attained between an electrode film and a wiring conductor element, and the wiring conductor element is hardly detached from the electrode film. In the method, a nickel film and a nickel oxide film are laminated in this order on a surface of an n-type silicon carbide substrate or an n-type silicon carbide region of a silicon carbide substrate, followed by a heat treatment under a non-oxidizing condition. The heat treatment transforms a portion of the nickel film into a nickel silicide film. Then, the nickel oxide film is removed with hydrochloric acid solution, and subsequently, a nickel aluminum film and an aluminum film are laminated in this order on a surface of the nickel silicide film.

BACKGROUND OF THE INVENTION

A. Field of the Invention

The present invention relates to a silicon carbide semiconductorelement, a method of manufacturing the same, and a silicon carbidedevice.

B. Description of the Related Art

Silicon carbide (hereinafter also referred to as SiC) is thermally,chemically and mechanically stable, and is expected to be applied to awide range of industry fields including light emitting elements, highfrequency devices, and power semiconductor devices. High withstandvoltage MOSFETs using SiC, for example, have an advantage of loweron-resistance than high withstand voltage MOSFETs using silicon (Si).Schottky diodes using SiC have an advantage of lower forward voltagedrop than Schottky diodes using silicon.

Intrinsically, on-resistance and switching speed of power devices are ina trade-off relation. Nevertheless power devices using SiC can achievelow on-resistance and high switching speed at the same time. In order toachieve low on-resistance or high switching speed, it is necessary toreduce contact resistance at an ohmic contact.

Recently, there is a technique widely employed for forming a lowresistance ohmic contact in an n-type SiC region, in which an ohmicelectrode structure is formed by depositing an electrode film, and theohmic electrode structure is then heat treated at a high temperature inthe range of 800° C. to 1,200° C. (See for example, Japanese Patent No.3303530, and Japanese Unexamined Patent Application Publication Nos.2002-175997 and H08-064801. The electrode film is, for example, a filmof nickel, tungsten or titanium. Nickel, in particular, used for anelectrode film, has attained a practical contact resistance value in anorder of 10⁻⁶Ω cm² at an ohmic contact. So, an ohmic contact usingnickel is very promising ohmic contact.

FIG. 11 shows a result of elemental analysis along the depth directionof a conventional ohmic contact using nickel obtained by means of X-rayphotoelectron spectroscopy. In FIG. 11, the ordinate represents thecontent of the elements and the abscissa represents the sputtering time(arbitrary unit). In order to form an ohmic contact shown in FIG. 11, atypical nickel film first is deposited on a SiC substrate by asputtering method. Then, a heat treatment is conducted in a vacuum (nothigher than 5×10⁻⁴ Pa) at 1,000° C. for 5 minutes. The heat treatment atthe high temperature forms a conductive thermal reaction layer (a nickedsilicide film) of a Ni—Si—C mixture on the nickel film surface. In thesurface region of the nickel silicide film, a large amount of carbonprecipitates that are diffused from the SiC substrate and the surface isvirtually covered with the carbon.

When a wiring conductor element such as aluminum film is connected to anelectrode film of a nickel film with precipitates of carbon thereon, aproblem of increase in contact resistance arises between the electrodefilm and the wiring conductor element. There is an additional problemthat the wiring conductor element is liable to detach.

A method to prevent carbon from precipitating has been proposed(Japanese Patent No. 3646548, for example) in which an ohmic electrodeis formed of an alloy composed of nickel and another metal that easilyforms a carbide, and a nickel film is formed on the film of this alloy.Another method has been proposed (Japanese Unexamined Patent ApplicationPublication No. 2006-202883, for example) in which an ohmic electrode iscomposed of a nickel silicide film, a first nickel film, a titaniumfilm, a film of alternately formed nickel and silicon, and a secondnickel film laminated in this order.

However, Japanese Patent No. 3646548 and Japanese Unexamined PatentApplication Publication No. 2006-202883 fail to mention a technology toconnect a wiring conductor element such as an aluminum film to theelectrode film of such as nickel. Consequently, it is a problem withthese methods of these two documents that a wiring contact element mayfail to be connected to a nickel film on which a silicon oxide film isformed. The technology disclosed in Japanese Unexamined PatentApplication Publication No. 2006-202883 has an additional problem ofcomplicated manufacturing process and high cost due to a multiple oflaminated layers.

The present invention is directed to overcoming or at least reducing theeffects of one or more of the problems set forth above.

SUMMARY OF THE INVENTION

It is therefore an object of the present invention to solve the problemsin the conventional technologies as described above and provide asilicon carbide semiconductor element having a low contact resistancebetween an electrode film and a wiring conductor element. Another objectof the invention is to provide a method of manufacturing such a siliconcarbide semiconductor element. Still another object of the invention isto provide a silicon carbide semiconductor element and a manufacturingmethod thereof in which a wiring conductor element is hardly detachedfrom an electrode film.

To solve the above-described problems and accomplish the objects, amethod of manufacturing a silicon carbide semiconductor element of theinvention comprises a first step for forming a nickel film on a surfaceof an n-type silicon carbide substrate or an n-type silicon carbideregion formed in a surface region of a silicon carbide substrate, a nextstep of forming a nickel oxide film on a surface of the nickel film, anda subsequent step of heat treatment step in a non-oxidizing atmosphere.In a preferred embodiment, the non-oxidizing atmosphere in the heattreatment is an atmosphere of vacuum or argon. A nickel silicide film isformed in a portion of the nickel film in the heat treatment step.

After the heat treatment step, there is a nickel oxide film-removingstep for removing the nickel oxide film with a hydrochloric acidsolution and an aluminum film-forming step for forming an aluminum filmon a surface of the nickel silicide film from which the nickel oxidefilm has been removed.

The method further may comprise, after the nickel oxide film-removingstep, a nickel aluminum film-forming step for forming a nickel aluminumfilm on a surface of the nickel silicide film, and then, the aluminumfilm is formed on the surface of the nickel aluminum film.

The nickel film preferably has a thickness in a range of 0.05 μm to 0.2μm, and the nickel oxide film has a thickness in a range of 0.05 μm to0.15 μm. The nickel aluminum film preferably has a thickness in a rangeof 5 nm to 20 nm, and the aluminum film has a thickness in a range of 2μm to 4 μm.

In a preferred embodiment, the nickel aluminum film is formed by meansof a sputtering method using a nickel aluminum target containing nickelin a range of 40 at % to 60 at % and the remainder of aluminum.

A silicon carbide semiconductor element according to the inventioncomprises an n-type silicon carbide substrate or a silicon carbidesubstrate having an n-type silicon carbide region in a surface regionthereof, a nickel film formed on a surface of the n-type silicon carbidesubstrate or a surface of the n-type silicon carbide region of a siliconcarbide substrate, a nickel aluminum film formed on the nickel film, andan aluminum film formed on a surface of the nickel aluminum film. Thenickel film is an ohmic electrode.

According to the invention described above, the heat treatment afterforming the nickel oxide film prevents carbon from precipitating on thesurface of the nickel silicide film.

According to the method of claims 4 or 6 of the invention, a nickelsilicide film without precipitation of carbon thereon is formed, and analuminum film is formed on the surface of the nickel silicide film.Therefore, an ohmic electrode is formed in which a contact resistancebetween an electrode film and a wiring conductor element is low and thewiring conductor element is hardly detached from the electrode film.

According to the invention, an adhesion layer of a nickel aluminum filmis formed on a surface of a nickel silicide film without carbonprecipitation, and an aluminum film is formed on the adhesion layer of anickel aluminum film. Therefore, an ohmic electrode is formed in whichthe wiring conductor is more hardly detached from the electrode film.

A silicon carbide semiconductor element and a manufacturing methodthereof according to the invention have the advantage that a low contactresistance is attained between an electrode film and a wiring conductorelement. The element and method also have the advantage that the wiringconductor element is hardly detached from the electrode film.

Some preferred embodiment of a silicon carbide semiconductor element andmanufacturing method thereof according to the invention will bedescribed in the following with reference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing advantages and features of the invention will becomeapparent upon reference to the following detailed description and theaccompanying drawings, of which:

FIG. 1 is a sectional view showing a structure of a silicon carbidesemiconductor element according to an embodiment of the invention;

FIG. 2 is a sectional view showing a manufacturing process of a siliconcarbide semiconductor element according to an embodiment of theinvention;

FIG. 3 is a flow chart showing a manufacturing process of a siliconcarbide semiconductor element according to an embodiment of theinvention;

FIG. 4 is a chart describing on test samples of silicon carbidesemiconductor element having a nickel oxide film;

FIG. 5 shows a result of a test for determining the products in thesample of Experiment 1 obtained by means of an X-ray diffraction method;

FIG. 6 shows a test result of elemental analysis along the depthdirection on the sample of Experiment 1 by means of an X-rayphotoelectron spectroscopy method;

FIG. 7 shows a result of a test for determining the products in thesample of Experiment 2 obtained by means of an X-ray diffraction method;

FIG. 8 shows the test results of elemental analysis along the depthdirection on the sample of Experiment 2 obtained by means of an X-rayphotoelectron spectroscopy method;

FIG. 9 shows a relationship between a method of forming an aluminum filmon a nickel silicide film and adhesion performance of the aluminum film;

FIG. 10 is a sectional view showing a structure of a MOSFET using asilicon carbide semiconductor element according to an embodiment of theinvention; and

FIG. 11 shows the test results of elemental analysis along the depthdirection on a sample of ohmic contact using nickel according to a priorart technology.

DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS Embodiment

FIG. 1 is a sectional view showing a structure of a silicon carbidesemiconductor element according to an embodiment of the invention.Referring to FIG. 1, an silicon carbide semiconductor element of theembodiment comprises n-type SiC region 1, and a lamination structure ofnickel silicide (Ni₂Si) film 4, nickel aluminum (NiAl) film 5, andaluminum (Al) film 6 laminated on SiC region 1 in this order.

Next, a method of manufacturing a silicon carbide semiconductor elementaccording to an embodiment of the invention will be described. FIG. 2 isa sectional view showing a manufacturing process of the silicon carbidesemiconductor element of the embodiment of the invention. FIG. 3 is aflow chart showing a manufacturing process of the silicon carbidesemiconductor element of the embodiment of the invention. Referring toFIG. 3, a cleaning step is first conducted (step S301) prior to forminga nickel electrode. Step S301 cleans a surface of n-type SiC substrate 1or n-type SiC region 1 of the element.

Then, nickel film 2 is deposited (step S302) on a surface of n-type SiCsubstrate 1 or n-type SiC region 1 cleaned in step S301. Subsequently,nickel oxide (NiO) film 3 is deposited (step S303) on nickel film 2deposited in step S302. Deposition steps of S302 and S303 are carriedout by means of a DC sputtering method, for example. The sputteringprocess in this embodiment is carried out under the conditions of DCpower of 300 W, pressure of 0.4 Pa, and a substrate temperature withoutheating. The sputtering in step S302 is conducted using solely argongas. The sputtering in step S303 is conducted using, for example, asputtering gas of a mixed gas containing 20% of oxygen in argon gas anda target of nickel.

If the thickness of the nickel oxide is too thin, diffusion of carbon tothe outermost surface of the substrate cannot be suppressed. If thenickel oxide film is too thick, removal of nickel oxide film 3afterwards by an etching step described later takes a long time.Accordingly, a thickness of nickel oxide 3 is preferably in a range of0.05 μm to 0.15 μm. If the thickness of nickel film 2 is too thin, thesputtering process is hardly controlled. In addition, an ohmic contactmay not be established. Accordingly, a thickness of the nickel film 2 ispreferably in a range of 0.05 μm to 0.15 μm.

Next, a heat treatment step (step S304) is conducted. Through the heattreatment, a portion of nickel film 2 is transformed into silicide film4. The heat treatment in step S304 is carried out at a high temperaturein a vacuum state. Specifically, the heat treatment is conducted at1,000° C. for 2 minutes in a state evacuated down to a pressure of nothigher than 5×10⁻⁴ Pa. Then, the treated article is cooled down to theroom temperature. Although the heat treatment in step S304 is conductedin vacuum, the step is not limited to conduct in vacuum, but otherconditions that do not cause oxidation is possible, for example, anargon atmosphere can be employed. However, a nitrogen atmosphere is notappropriate. After this step, a structure as shown in FIG. 2 resultshaving nickel film 2 (with nickel silicide film 4 thereon) and nickeloxide film 3 laminated on n-type SiC region 1 in this order.

After that, nickel oxide film 3 is removed (step S305) by a wet etchingprocess using a hydrochloric acid solution. By this step, nickelsilicide film 4 that is formed on nickel film 2 by the heat treatment ofstep S304 becomes the outermost surface. In step S305, an etchingprocess is conducted, for example, for 6 minutes using a hydrochloricacid solution heated to 50° C. Then, processes of cleaning with purewater (step S306) and drying are conducted. In step S305, aconcentration of the hydrochloric acid is adequate if it can dissolvenickel oxide film 3. However, if the concentration of hydrochloric acidis too low, it takes a long time to remove nickel film 3, and moreover,nickel oxide film 3 may not dissolve. Accordingly, the hydrochloric acidsolution preferably contains hydrogen chloride in the range of 10 to 37wt %.

Then, nickel aluminum film 5 is deposited on nickel silicide film 4(step S307), followed by deposition of aluminum film 6 (step S308). Thedeposition processes in steps S307 and S308 are carried out by means ofa DC sputtering method, for example. The conditions in this embodimentare a DC power of 300 W, a pressure of 0.4 Pa, and a substratetemperature of 150° C. The sputtering processes are conductedcontinuously in vacuum using solely argon gas. The composition of thenickel aluminum target in step S307 is nickel in the range of 40 to 60at % and the remainder of aluminum.

If the thickness of nickel aluminum film 5 is too thin, the function asan adhesion layer cannot be performed. If a thickness of nickel aluminumfilm 5 is too thick, a resistance higher than that of aluminum film 6results. Accordingly, a thickness of nickel aluminum film 5 ispreferably in the range of 5 nm to 20 nm. If a thickness of aluminumfilm 6 is too thin, a resistance of nickel aluminum film 5 becomeshigher than that of aluminum film 6. Although the higher the thicknessof aluminum film 6 is the better, with an aluminum film that is toothick it takes a long time to form the film. For example, it takes about1 hour to form an aluminum film with a thickness of 4 μm. Accordingly, athickness of aluminum film 6 is preferably in the range of 2 μm to 4 μm.

Studies have been made to suppress precipitation of carbon from n-typeSiC region 1. FIG. 4 shows test samples of silicon carbide semiconductorelements having a nickel oxide film formed therein. The sample ofExperiment 1 as shown in FIG. 4 has a structure comprised of n-type SiCregion 1 and nickel oxide film 3 deposited on n-type SiC region 1. Thethickness of nickel oxide film 3 is about 0.2 μm. The sample ofExperiment 2 has a structure comprised of n-type SiC region 1, nickelfilm 2 deposited on n-type SiC region 1, and nickel oxide film 3deposited on nickel film 2. Therefore, the sample of Experiment 2 hasthe same structure as the silicon carbide semiconductor elementaccording the embodiment of the invention as described hereinbefore.Both the thicknesses of nickel film 2 and nickel oxide film 3 are about0.1 μm. The samples of Experiment 1 and Experiment 2 are heat treated at1,000° C. for 5 minutes in a vacuum state (at a pressure not higher than5×10⁻⁴ Pa).

Studies are first done on the sample of Experiment 1. FIG. 5 shows aresult of a test for identifying the product in the sample of Experiment1 obtained by means of an X-ray diffraction method (XRD). In FIG. 5, theordinate represents intensity and the abscissa represents the angle (2θ)of the diffraction line. In the sample of Experiment 1 as shown in FIG.5, only a peak of nickel oxide is observed except for the peak of SiC.FIG. 6 shows a result of elemental analysis along the depth direction onthe sample of Experiment 1 obtained by means of an X-ray photoelectronspectroscopy (XPS). In FIG. 6, the ordinate represents the content ofthe elements and the abscissa represents the sputtering time (inarbitrary unit). In the sample of Experiment 1 as shown in FIG. 6, noreaction between n-type SiC region 1 and nickel oxide film 3 isobserved.

Then, studies on the sample of Experiment 2 are done. FIG. 7 shows theresult of a test for identifying the product in the sample of Experiment2 obtained by means of an X-ray diffraction method. In FIG. 7, theordinate represents intensity and the abscissa represents the angle (2θ)of the diffraction line. In the sample of Experiment 2 as shown in FIG.7, peaks of nickel oxide, nickel, and nickel silicide are observed inaddition to the peak of SiC. FIG. 8 shows a result of elemental analysisalong the depth direction on the sample of Experiment 2 obtained bymeans of an X-ray photoelectron spectroscopy. In FIG. 8, the ordinaterepresents the content of the elements and the abscissa represents thesputtering time (in arbitrary unit). In the sample of Experiment 2 asshown in FIG. 8, silicon and carbon diffuse from n-type SiC region 1into nickel film 2. As a result, a portion of nickel film 2 transformsinto nickel silicide film 4. Carbon does not diffuse into nickel oxidefilm 3, but the silicon diffuses to the surface. From a binding energyshift of the XPS, it has been indicated that the surface of nickel oxidefilm 3 has become a SiO₂ film due to the diffused silicon.

In the samples of Experiment 1 and Experiment 2 as shown above, carbondoes not diffuse to the outermost surface. When a nickel electrode isformed on n-type SiC region 1, a heat treatment process (an annealingprocess) that is conducted after forming nickel oxide film 3 on nickelfilm 2 forms nickel silicide film 4 without diffusion of carbon up tothe surface. Nickel silicide film 4 exhibits lower resistivity thannickel film 2. Therefore, the sample of Experiment 2 is suited for asilicon carbide semiconductor element of the present invention.

The SiO₂ film formed on the surface of nickel oxide film 3 is aninsulator. Nickel oxide film 3 is a semiconductor with very highresistivity. Consequently, the SiO₂ film and nickel oxide film 3 have tobe removed before forming aluminum film 6. Actual devices include SiO₂films with their own function in addition to the one accompanying theohmic electrode, so the SiO₂ film cannot be removed using fluorine.Consequently, using a hydrochloric acid solution, nickel oxide film 3 isremoved and at the same time, the SiO₂ film laminated on nickel oxidefilm 3 is removed with it. In this embodiment, the sample of Experiment2 is dipped for etching for 6 minutes in a hydrochloric acid solutioncontaining 37% of hydrogen chloride heated to 50° C. This process peelsoff nickel oxide film 3 having a SiO₂ film laminated thereon, exposingnickel silicide film 4 on the uppermost surface.

Next, studies have been made of a method for forming a wiring materialof aluminum film 6 on nickel silicide film 4 exposed on the uppermostsurface through the above-described process. FIG. 9 shows a relationshipbetween a method for forming aluminum film 6 on nickel silicide film 4and the adhesion performance of aluminum film 6. The adhesionperformance in FIG. 9 is determined by sticking a tape and then peelingthe tape off. Aluminum film 6 and nickel aluminum film 5 are depositedby a DC sputtering method under the conditions of a DC power of 300 W, apressure of 0.4 Pa, a sputtering gas of argon, and a substratetemperature of 150° C. The composition of the nickel aluminum target forsputtering of the nickel aluminum film 5 is 50% of nickel and 50% ofaluminum. The thickness of the nickel aluminum film 5 is 10 nm and thethickness of aluminum film 6 is 3 μm.

The composition of nickel aluminum film 5 is determined to hold abalance between the two elements in order to enhance adhesivenessbetween nickel silicide film 4 and aluminum film 6, and to prevent theresistance of nickel aluminum film 5 from rising. Concerning thethickness of nickel aluminum film 5, a too thin film cannot ensureadhesiveness. However, a thin film is favorable for reducing electricresistance. Accordingly, a thickness of nickel aluminum film 5 ispreferably around 10 nm.

Experiment 3 in FIG. 9 shows a method of forming aluminum film 6 on asubstrate without nickel oxide film 3 according to a prior art, andadhesion performance of aluminum film 6 formed by that method. In thesample of Experiment 3, aluminum film 6 is directly formed on a surfacewith a plenty of carbon precipitates, and aluminum film 6 is depositedafter nickel film 2 is deposited. In this sample, aluminum film 6 iswholly peeled off after only one time of peeling test using a tape. Thisresult is caused by weak adhesiveness between the carbon precipitates onthe sample surface and the aluminum. To improve adhesiveness, a methodfor holding the adhesiveness has been proposed in which the substrate isheated to a high temperature. But, aluminum film 6 detaches in manyspecimen elements, resulting in a degraded yield.

In the sample of Experiment 4, nickel oxide film 3 is deposited onnickel film 2, and then aluminum film 6 is deposited on the nickel oxidefilm. In this sample, only one peeling test using a tape peels offalmost the whole of aluminum film 6. This is caused by weak adhesivenessbetween nickel oxide film 3 and aluminum film 6, although theprecipitation of carbon on the sample surface is suppressed.

In the sample of Experiment 5, nickel oxide film 3 is deposited onnickel film 2 and, after removing nickel oxide film 3 with ahydrochloric acid solution, aluminum film 6 is deposited. In thissample, only a part of aluminum film 6 peels off after several times ofpeeling test using a tape. Thus, the adhesiveness of aluminum film 6 hasbeen improved. This is because the carbon precipitation is suppressedand the nickel oxide film is removed, thus, aluminum film 6 is depositedon nickel silicide film 4.

In the sample of Experiment 6, nickel oxide film 3 is deposited onnickel film 2 and, after removing nickel oxide film 3 with ahydrochloric acid solution, and after depositing an adhesion layer ofnickel aluminum film 5 with a thickness of 10 nm, aluminum film 6 isdeposited on the adhesion layer. Therefore, aluminum film 6 is depositedon nickel aluminum film 5 which is deposited on nickel silicide film 4.In this sample, the peeling test using a tape in several tens of timesdoes not cause peeling off of aluminum film 6. This is brought about byexcellent adhesiveness of nickel aluminum film 5 with both nickelsilicide film 4 and aluminum film 6.

In order to form a contact electrode on n-type SiC region 1 usingnickel, and to form a wiring material of aluminum film 6 on the contactelectrode in this embodiment of the invention, nickel oxide film 3 isfirst formed on nickel film 2. Then, heat treatment is conducted tomodify nickel film 2 to a mixed film of nickel silicide and carbon(nickel silicide film 4). After removing nickel oxide film 3 using ahydrochloric acid solution, nickel aluminum film 5 and aluminum film 6are sequentially laminated in this order. By this procedure, a reliableohmic contact is formed that exhibits strong adhesiveness and hasaluminum film 6 that scarcely peels off. Thus, the samples of Experiment5 and Experiment 6 are suited for a silicon carbide semiconductorelement of this embodiment. Of the samples, the sample of Experiment 6is more appropriate for a silicon carbide semiconductor elementaccording to embodiment of the invention.

Now, description will be made of a device employing the silicon carbidesemiconductor element according to embodiment of the invention. FIG. 10is a sectional view of a structure of a MOSFET using a silicon carbidesemiconductor element according an embodiment of the invention.Referring to FIG. 10, the MOSFET comprises substrate 10 and drift layer11 formed on substrate 10. On a part of drift layer 11, two body regions12 are separately provided. The region between the two body regions 12on the drift layer is JFET region 14 (a junction field effect transistorregion). Body contact region 15 is formed in a portion of the surfaceregion of each body region 12. Source contact region 16 is formed in aportion of the surface region of body region 12 in a place nearer toJFET region 14 than body contact region 15, source contact region 16being in contact with body contact region 15 and not in contact withJFET region 14. Thus, two MOSFETs are provided at both sides of JFETregion 14.

Gate electrode 17 is disposed over JFET region 14 and a portion of bodyregion 12 through intercalating gate insulation film 18. Sourceelectrode 19 is formed in contact with body contact region 15 and sourcecontact region 16. Source electrode 19 is isolated from gate electrode17 with interlayer insulation film 20. Drain electrode 21 is provided incontact with the back surface of substrate 10.

In the MOSFET shown in FIG. 10, substrate 10 is an n-type SiC region anddrain electrode 21 is a nickel film. Thus, a silicon carbidesemiconductor element of the invention can be applied to the drain sideof the MOSFET. Therefore, a silicon carbide semiconductor elementaccording to an embodiment of the invention can be used in a siliconcarbide device.

As is described thus far, a silicon carbide semiconductor element and amanufacturing method thereof are useful in a semiconductor device usinga silicon carbide substrate, and suited in particular for forming anohmic electrode.

Thus, a silicon carbide semiconductor element and a manufacturing methodthereof have been described according to the present invention. Manymodifications and variations may be made to the techniques andstructures described and illustrated herein without departing from thespirit and scope of the invention. Accordingly, it should be understoodthat the devices and methods described herein are illustrative only andare not limiting upon the scope of the invention.

This application is based on and claims priority to Japanese PatentApplication 2007-212919, filed on 17 Aug. 2007. The disclosure of thepriority application in its entirety, including the drawings, claims,and the specification thereof, is incorporated herein by reference.

DESCRIPTION OF SYMBOLS

-   1: n-type silicon carbide substrate or an n-type silicon carbide    region of a silicon carbide substrate-   2: nickel film-   3: nickel oxide film-   4: nickel silicide film-   5: nickel aluminum film-   6: aluminum film

What is claimed is:
 1. A method of manufacturing a silicon carbidesemiconductor element comprising: forming a nickel film on a surface ofan n-type silicon carbide substrate or an n-type silicon carbide regionformed on a silicon carbide substrate; forming a nickel oxide film on asurface of the nickel film; and heat treating the nickel film in anon-oxidizing atmosphere.
 2. The method of manufacturing a siliconcarbide semiconductor element according to claim 1, wherein thenon-oxidizing atmosphere is an atmosphere of vacuum or argon.
 3. Themethod of manufacturing a silicon carbide semiconductor elementaccording to claim 1, wherein a nickel silicide film is formed in aportion of the nickel film during the heat treating.
 4. The method ofmanufacturing a silicon carbide semiconductor element according to claim3 further comprising, after the heat treating, removing the nickel oxidefilm with a hydrochloric acid solution; and forming an aluminum film ona surface of the nickel silicide film from which the nickel oxide filmhas been removed.
 5. The method of manufacturing a silicon carbidesemiconductor element according to claim 3 further comprising removingthe nickel oxide film with a hydrochloric acid solution forming a nickelaluminum film on a surface of the nickel silicide film after removingthe nickel oxide film, forming an aluminum film on the surface of thenickel aluminum film.
 6. The method of manufacturing a silicon carbidesemiconductor element according to claim 1, wherein the nickel film thatis formed has a thickness in a range of 0.05 μm to 0.2 μm, and thenickel oxide film that is formed has a thickness in a range of 0.05 μmto 0.15 μm.
 7. The method of manufacturing a silicon carbidesemiconductor element according to claim 5, wherein the nickel aluminumfilm that is formed has a thickness in a range of 5 nm to 20 nm, and thealuminum film that is formed has a thickness in a range of 2 μm to 4 μm.8. The method of manufacturing a silicon carbide semiconductor elementaccording to claim 5, wherein the nickel aluminum film is formed bymeans of a sputtering method using a nickel aluminum target containingnickel in a range of 40 at % to 60 at %, with the remainder beingaluminum.